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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1148
DESCRIPTION *With TO-3P(I) package *Complement to type 2SB863 APPLICATIONS *Power amplifier applications *Recommend for 70W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 140 140 5 10 1 100 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=5A; IB=0.5A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=10V IE=0 ; VCB=10V ;f=1MHz 55 25 MIN 140
2SD1148
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob
TYP.
MAX
UNIT V
2.0 1.5 5 5 160
V V A A
20 200
MHz pF
hFE-1 Classifications R 55-110 O 80-160
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1148
Fig.2 Outline dimensions(unindicated tolerance:0.10 mm)
3


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